SI4154DY-T1-GE3 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

О ДАТАШИТЕ

• Маркировка
  SI4154DY-T1-GE3
• Производитель
  Siliconix
• Описание
  Vishay Intertechnology SI4154DY-T1-GE3 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 24 A Current - Continuous Drain (id) @ 25?° C: 36A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 75 S Gate Charge (qg) @ Vgs: 105nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1716345 Input Capacitance (ciss) @ Vds: 4230pF @ 20V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Power - Max: 7.8W Power Dissipation: 3500 mW Rds On (max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 0.0033 Ohm @ 10 V Series: TrenchFET?® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 250?µA Other Names: SI4154DY-T1-GE3TR
• Количество страниц
  7 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

Скачать datasheet SI4154DY-T1-GE3.pdf
Файл формата Pdf 99,90 KB